PART |
Description |
Maker |
APT50GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT32GU30B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT35GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT15GP90B |
MOSFET The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. 功率MOS 7 IGBT的是一个高压电源IGBT的新一代
|
Advanced Power Technology, Ltd.
|
APT50M60L2VR_04 APT50M60L2VR APT50M60L2VR04 |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V㈢ MOSFET POWER MOS V? MOSFET
|
MICROSEMI[Microsemi Corporation]
|
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
2SK2484 |
Nch power MOSFET MP-25 900V/5A MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK2981 2SK2981-Z 2SK2981-E1 2SK2981-T1 2SK2981-T2 |
Power MOSFET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC] NEC Corp.
|
APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|
APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|