| PART |
Description |
Maker |
| BA01207 |
GaAs HBT HYBRID IC
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SBB-5089Z SBB-5089 |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫，级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
http://
ETC[ETC]
|
| SBB-4089 SBB-4089Z |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫，级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
Electronic Theatre Controls, Inc.
http://
|
| TQ7125 |
824-849 MHz, Cellular AMPS/TDMA Power Amp IC-HBT
3V HBT TDMA Power Amplifier IC
|
TriQuint Semiconductor
|
| MGFS36E2527 MGFS36E252707 |
2.5-2.7GHz HBT HYBRID IC
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
|
| MGFS36E3436A MGFS36E3436A10 |
3.4-3.6GHz HBT HYBRID IC
|
Mitsubishi Electric Semiconductor
|
| RF3800 RF3800PCBA-416 |
GaAs HBT PRE-DRIVER AMPLIFIER
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| HMC36107 HMC361 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 11 GHz
|
Hittite Microwave Corpo...
Hittite Microwave Corporation
|
| RF3802 RF3802PCBA-410 RF3802PCBA-411 RF38021 |
GaAs HBT PRE-DRIVER AMPLIFIER
|
RF Micro Devices
|
| HMC432 |
SMT GaAs HBT MMIC DIVIDE-BY-2, DC - 8.0 GHz
|
美国讯泰微波有限公司上海代表
|
