| PART |
Description |
Maker |
| BD139 BD135G BD137 BD137G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
| MJE344-D |
Plastic NPN Silicon Medium-Power Transistor
|
ON Semiconductor
|
| BD180-D |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| 2N4920G 2N4918 2N4918_04 2N4919 2N4920 |
Medium-Power Plastic PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| BD675-D |
Plastic Medium-Power Silicon NPN Darlingtons
|
ON Semiconductor
|
| MJE10B3 MJE1093PNP MJE2090 MJE2103 MJE2100 MJE2102 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| MJE371-D |
Plastic Medium-Power PNP Silicon Transistors
|
ON Semiconductor
|
| BD237-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
| MJE344G MJE34406 |
Plastic NPN Silicon Medium?Power Transistor
|
ON Semiconductor
|
| BD439 BD441 BD435 BD437 BD437G BD437T |
Plastic Medium Power Silicon NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| BDX53B-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
