| PART |
Description |
Maker |
| 2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
Boca Semiconductor Corporation
|
| BD157 |
PLASTIC MEDIUM POWER SILICON TRANSISTORS
|
Continental Device India Limited
|
| TIP107 |
PNP Plastic Medium-Power Silicon Transistors
|
Micro Commercial Compon...
|
| BD139 BD135G BD137 BD137G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
| BD136-D |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| BD676-D |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
| BD159-D |
Plastic Medium Power NPN Silicon Transistor
|
ON Semiconductor
|
| BD437-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
| BD436T BD436G BD438G BD442 |
Plastic Medium Power Silicon PNP Transistor
|
Rectron Semiconductor
|
| TIP100 TIP107 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| BDX53BG BDX53B06 BDX54BG BDX53CG BDX53B BDX54B BDX |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
