PART |
Description |
Maker |
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
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ON Semiconductor
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A120212 |
The Allegro A1202 and A1203 Hall-effect bipolar switches are next-generation replacements and extension of the popular Allegro A3133 and A3132 bipolar switch product line.
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Allegro MicroSystems
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TA84002F TA84002FG |
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP 东芝双极线性集成电路多芯片 PWM CHOPPER TYPE 2−PHASE BIPOLAR STEPPING MOTOR DRIVER PWM CHOPPER TYPE 2 .PHASE BIPOLAR STEPPING MOTOR DRIVER
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Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
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BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
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82S129 N82S126A N82S126N N82S129A N82S129N 82S126 |
V(cc): 7.0V; V(in): 5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. 1K BIT TTL BIPOLAR PROM
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
FA7612CN FA7612CP FA7612CPN FA7610CN FA7610CP FA76 |
Bipolar IC for switching power supply control FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control CAP CER 2000PF 50V 5% C0G 0603 0.08 A SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8
|
COLLMER SEMICONDUCTOR INC FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd.
|
AM27S29 AM27S29ADC AM27S29AJC AM27S29A AM27S29SA A |
4096 Bit Bipolar PROM 4,096-Bit (512x8) Bipolar PROM
|
http:// AMD[Advanced Micro Devices]
|
CPH6223-TL-E |
Bipolar Transistor Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
|
ON Semiconductor
|
TA31142FN TA31142F |
IF AMPLIFIER,BIPOLAR,SSOP,20PIN,PLASTIC IF AMPLIFIER,BIPOLAR,SOP,20PIN,PLASTIC From old datasheet system
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Toshiba America Electronic Components, Inc.
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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IRF[International Rectifier]
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