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BR108 - MOSFET N-CH 600V 10A TO-220 SINGLE PHASE 10 AMP BRIDGE RECTIFIERS

BR108_1220275.PDF Datasheet

Part No.

BR108 BR1005 BR101 BR1010 BR102 BR104 BR106

Description

MOSFET N-CH 600V 10A TO-220
SINGLE PHASE 10 AMP BRIDGE RECTIFIERS

File Size

28.93K / 2 Page

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Part: BR108

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Full text search : MOSFET N-CH 600V 10A TO-220 SINGLE PHASE 10 AMP BRIDGE RECTIFIERS

Product Description search : MOSFET N-CH 600V 10A TO-220 SINGLE PHASE 10 AMP BRIDGE RECTIFIERS

Related Part Number

PART	Description	Maker
STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1	N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET	STMicroelectronics
STP2NC60 STP2NC60FP 7506	N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh?II MOSFET N-CHANNEL 600V 7 OHM 1.9A TO-220-TO-220FP POWERME N-CHANNEL 600V 7 OHM 1.9A TO-220/TO-220FP POWERMESH II MOSFET From old datasheet system N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET N-CHANNEL 600V 7 OHM 1.9A TO-220/TO-220FP POWERMESH II MOSFET	意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT	TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-208AA TRIAC\|600V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 200伏五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|600V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 12A条口T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 200伏五（DRM）的\| 5A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|15A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 15A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 400V五（DRM）的\| 25A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 4A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|500V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 500V五（DRM）的\| 4A条口T）的有效值\|20 TRIAC\|400V V(DRM)\|3A I(T)RMS\|TO-202 可控硅\| 400V五（DRM）的\| 3A条口（T）的有效值\|02 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 400V五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 10A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 600V的五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|800V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 THYRISTOR MODULE\|TRIAC 晶闸管模块\|可控 TRIAC\|800V V(DRM)\|15A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 15A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-202 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\|02 Transient Voltage Suppressor Diodes 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 700V的五（DRM）的\| 25A条口（T）的有效值\|20 可控硅\| 200伏五（DRM）的\| 10A条口（T）的有效值\|20 TRIAC\|300V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-39 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|200V V(DRM)\|3A I(T)RMS\|TO-202 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|600V V(DRM)\|3A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|800V V(DRM)\|16A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|PRESS-13 TRIAC\|500V V(DRM)\|15A I(T)RMS\|TO-3 TRIAC\|500V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|200V V(DRM)\|15A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|400V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|600V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-208AA TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|200V V(DRM)\|20A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC\|400V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|600V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|500V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|200V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|15A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|15A I(T)RMS\|TO-220 TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|40A I(T)RMS\|IST-3RT-1/4 TRIAC\|500V V(DRM)\|12A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|12A I(T)RMS\|TO-220AB TRIAC\|400V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|700V V(DRM)\|40A I(T)RMS\|TO-218 TRIAC\|200V V(DRM)\|4A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|16A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|5A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|8AI(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|25AI(T)RMS\|FBASE-R TRIAC\|600VV(DRM)\|25AI(T)RMS\|CAN TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-39 TRIAC\|800VV(DRM)\|25AI(T)RMS\|TO-220AB THYRISTORMODULE\|TRIAC TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-220AB TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-218 TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-218VAR TRIAC\|600VV(DRM)\|25AI(T)RMS\|PRESS-13 TRIAC\|200V V(DRM)\|25A I(T)RMS\|TO-220	Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
IT124G IT84C IT82B IT102G IT120F IT124F IT100F IT8	TRIAC\|400V V(DRM)\|12A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|50V V(DRM)\|12A I(T)RMS\|TO-220 TRIAC\|50V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|50V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 50V五（DRM）的\| 8A条口T）的有效值\|20 TRIAC\|100V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 100V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 10A条口（T）的有效值\|220 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|220 TRIAC\|50V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 50V五（DRM）的\| 8A条口（T）的有效值\|20	STMicroelectronics N.V. Electronic Theatre Controls, Inc. Sullins Connector Solutions, Inc. Sanyo Electric Co., Ltd. KEC Holdings Aavid Thermalloy, LLC Cornell Dubilier Electronics, Inc.
STP22NM60 STB22NM60 STB22NM60-1 STF22NM60 STW22NM6	N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh?Power MOSFET N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmeshPower MOSFET N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh⑩Power MOSFET N沟道600V 0.19欧姆- ⑩第22A TO-220/FP/D2PAK/I2PAK/TO-247的MDmesh功率MOSFET N-CHANNEL Power MOSFET	STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V. ST Microelectronics
STGP10NB60SD GP10NB60SD	N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT	STMICROELECTRONICS[STMicroelectronics]
STGP10NC60HD STGB10NC60HD GB10NC60HD GP10NC60HD	N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT	STMICROELECTRONICS[STMicroelectronics]
STW10NB60 6241	N-CHANNEL Power MOSFET N - CHANNEL 600V - 0.69 - 10A - TO-247 PowerMESH TM MOSFET From old datasheet system N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET	ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
GP10NC60HD STGB10NC60HD STGB10NC60HD0710 STGF10NC6	N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT	STMicroelectronics
STGF14NC60KD STGF10NC60KD07 STGP10NC60KD GB10NC60K	N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT	STMICROELECTRONICS[STMicroelectronics]
STP5NK60ZFP STD5NK60Z STD5NK60ZT4 STP5NK60Z	N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESHPower MOSFET N沟道600V 1.2ohm - 5A条TO-220/TO-220FP/DPAK齐纳保护SuperMESH？功率MOSFET N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET	STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
IRFIBC40GLC IRFIBC40GLCPBF	600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)	IRF[International Rectifier]

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