| PART |
Description |
Maker |
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62WV51216ALL IS62WV51216BLL |
(IS62WV51216A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| IS62WV25616ALL-70BI IS62WV25616ALL-70T IS62WV25616 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS62WV10248BLL-70BI IS62WV10248BLL-55BLI IS62WV102 |
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS65C10248AL IS65C10248AL-55CTLA3 IS65C10248AL-55M |
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS66WV1M16DALL IS66WV1M16DBLL |
16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62LV12816BLL IS62LV12816BLL-10B IS62LV12816BLL-1 |
x16 SRAM x16的SRAM
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| IS62U6416LL-20B IS62U6416LL-20K IS62U6416LL-20BI I |
64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 200 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| BS616UV1610FI BS616UV1610 BS616UV1610BC BS616UV161 |
Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
