PART |
Description |
Maker |
CHT9013PT |
NPN Silicon Transisto r
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Chenmko Enterprise Co. Ltd.
|
AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
1.5KE20 1.5KE180 1.5KE110 1.5KE7.5 1.5KE27 1.5KE8. |
VOLTAGE 6.8V ~ 440V 1500W Peak Power / 5.0W Steady State 1500W Peak Power TVS
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnologie... SeCoS Halbleitertechnol...
|
1S8 1S10 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere)
|
Pan Jit International Inc. Pan Jit International I...
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1N5818 1N5819 1N5817 |
1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere)
|
PANJIT[Pan Jit International Inc.]
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
1SMB33CAT3G 1SMB36CAT3G 1SMBXXCAT3G 1SMB10CAT3 1SM |
Watt Peak Power Zener Transient Voltage Suppressors Watt Peak Power Zener Transient Voltage Suppressors 瓦峰值功率齐瞬态电压抑制器 Watt Peak Power Zener Transient Voltage Suppressors 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
|
ONSEMI[ON Semiconductor]
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1N5819 1N5817 1N5818 |
IC ENCORE XP MCU FLASH 4K 28SOIC 1安培肖特基电 200伏特,电一点?安 MDSTBV 2,5/ 3-G-5,08 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere
|
Surge Components, Inc. SURGE[Surge Components]
|
GBPC25 GBPC GBPC35 GBPC12 GBPC15 GBPC2504 GBPC3504 |
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers Aluminum Polymer Radial Lead Capacitor; Capacitance: 680uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk 12/ 15/ 25/ 35 Ampere Glass Passivated Bridge Rectifiers 25 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器(平均整流电5A,重复反相电压峰00V)) 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器(平均整流电35A,重复反相电压峰00V)) 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器(平均整流电35A,重复反相电压峰00V)) 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器(平均整流电35A,重复反相电压峰00V)) 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers 12555安培玻璃钝化整流 25 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V)) 15 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
FMKA130 FMKA130NL |
1.0 Schottky Power Rectifier 1.2 Watt Power Dissipation Package 1.0 Ampere, Forward Voltage Less than 600mV 1.2 Watt Power Dissipation Package 1.0 Ampere/ Forward Voltage Less than 600mV
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
SMDJ100A SMDJ110A SMDJ130A SMDJ120A SMDJ150 SMDJ17 |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
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