| PART |
Description |
Maker |
| B72500DXXXX |
CeraDiode Reliable ESD protection of single lines
|
EPCOS
|
| PM50RVA120 |
CAP ARRAY, 4 X 3300PF 50V 0612X7RCAP ARRAY, 4 X 3300PF 50V 0612X7R; CAPACITANCE:3.3NF; VOLTAGE RATING, DC:50V; CAPACITOR DIELECTRIC TYPE:CERAMIC MULTI-LAYER; SERIES:W3A; TOLERANCE, :10%; TOLERANCE, -:10%; TEMP, OP. MAX:125(DEGREE RoHS Compliant: Yes
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KMM5364005BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5361203C2WG KMM5361203C2W |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KMM5364005BSWG KMM5364005BSW |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| KMM5361205C2W |
1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
