| PART |
Description |
Maker |
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| RF5110G RF5110GPCBA-410 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| CGY2013G CGY2013GC1 |
GSM 4 W power amplifier
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| RF5110 RF5110PCBA |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| RF2173PCBA-41X RF21731 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| 2SC2235 C2235 E000698 |
AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc.
|
| MRFIC1859 |
Dual Band / GSM 3.6V Integrated Power Amplifier
|
Motorola
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
