| PART |
Description |
Maker |
| CJP02N60 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology
|
| CJP02N60 |
Power Filed Effect Transistor
|
江苏长电科技股份有限公司
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| CMT02N60GN220 CMT02N60GN220FP CMT02N60GN251 CMT02N |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
|
| MTV20N50E |
Power Field Effect Transistor
|
ON Semiconductor
|
| MTD1N40 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MRF255PHT |
RF Power Field-Effect Transistor
|
Motorola, Inc
|
| MTP15N15 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| VN98AK VN35AK VN66AK VN67AK VN99AK |
HELD EFFECT POWER TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
