PART |
Description |
Maker |
IXDN75N120 L209 |
High Voltage IGBT IGBT Discretes: NPT IGBT From old datasheet system High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation] IXYS, Corp.
|
GM195A |
P N P S I L I C O N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
IXGH28N120B IXGT28N120B |
High Voltage IGBT IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS Corporation
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
SGH23N60UFD SGH23N60UFDTU |
Discrete, High Performance IGBT with Diode Ultra-Fast IGBT High Input Impedance
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
SGS23N60UFD SGS23N60UFDTU |
High speed switching Ultra-Fast IGBT Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
STA9K9.1P STA9K7.5P STA9K8.2P |
9000 WATTS PEAK PULSE POWE 7.5-100 VOLTS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
|
Solid States Devices, Inc. SSDI[Solid States Devices, Inc]
|
MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
SGH80N60UF SGH80N60 SGH80N60UFTU |
Discrete, High Performance IGBT Ultra-Fast IGBT CONNECTOR ACCESSORY
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|