| PART |
Description |
Maker |
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| DS32KHZ DS32KHZ_WBGA DS32KHZ_DIP DS32KHZ-N DS32KHZ |
32.768kHz Temperature-Compensated Crystal Oscillator
32.768 kHz Temperature-Compensated Crystal Oscillator
|
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
MAXIM - Dallas Semiconductor
|
| MPXV2010DP MPXV2010GP MPX2010 MPX2010D MPX2010DP M |
Compensated Pressure Sensor
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MPXM2202 MPXM2202A MPXM2202AS MPXM2202AST1 MPXM220 |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200 KPA ON CHIP TEMPERATURE COMPENSATED & CALIBRATED SILICON PRESSURE SENSORS
|
Motorola, Inc.
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| 1N822 1N822-1 1N822A 1N824 1N824-1 1N824A 1N821-1 |
Bobbins Transformer; Supply Voltage:230V; Power Rating:2.5VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.375"; External Height:0.813"; External Width:1.125"; Frequency:60GHz; Leaded Process Compatible:Yes
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.55 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
TRANSF 17VAC .34A FLAT PACK PW 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
0TC Reference Voltage Zener 0TC参考电压稳
Cleaning Compound; Dispensing Method:Spray; For Use With:Static Control Mats and Work Surfaces; Volume:1quart (US) RoHS Compliant: NA
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
Coilcraft, Inc.
Microsemi, Corp.
TOKO, Inc.
MICROSEMI[Microsemi Corporation]
|
| MPXM2202 |
200 kPa On-Chip Temperature Compensated and Calibrated Silicon Pressure Sensors
From old datasheet system
200 kPa On-Chip Temperature Compensated & Calibrated Pressure Sensors
|
Motorola
|
| ECS-500-144-B ECS-500 |
TEMPERATURE COMPENSATED OSCILLATOR
|
ECS, Inc.
|
| TO506 TO50613 |
Temperature Compensated Crystal Oscillator
|
Vanlong Technology Co., Ltd.
|
| TO52013 |
Temperature Compensated Crystal Oscillator
|
Vanlong Technology Co., Ltd.
Vanlong Technology Co., Ltd...
|
| 1N4772A 1N4770 1N4771A 1N4773 |
9.1V TEMPERATURE COMPENSATED ZENER DIODE
|
Digitron Semiconductors
|
| C2269 |
Temperature Compensated Crystal Oscillators
|
Vectron
|
