PART |
Description |
Maker |
SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
MW6S010GMR1 MW6S010GNR1 MW6S010MR1 MW6S010 MW6S010 |
RF Power Field Effect Transistor
|
飞思卡尔半导体(中国)有限公司 FREESCALE[Freescale Semiconductor, Inc] Freescale (Motorola)
|
MRF8S7235NR3 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
CMT20N503P CMT20N50 |
POWER FIELD EFFECT TRANSISTOR
|
List of Unclassifed Manufacturers ETC[ETC]
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MTP15N05E |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
MTP2N90 MTM2N85 MTM2N90 MTP2N85 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
|