| PART |
Description |
Maker |
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MRF1511N |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
|
| MTM20P10 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| MRF1517T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
|
| MTP12N10L |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MRF1517NT1 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| IRF830 |
Power Field Effect Transistor
|
ON Semiconductor
|
| MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
| MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
