| PART |
Description |
Maker |
| CRF24060D |
60 W SiC RF Power MESFET Die
|
Cree, Inc.
|
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| RF3930D |
10W GaN on SiC Power Amplifier Die
|
RF Micro Devices
|
| S6306 |
SiC Schottky Barrier Diode Bare Die
|
Rohm Co., Ltd.
|
| S6203 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6302 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S2305-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2206 S2206-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
