| PART |
Description |
Maker |
| SW15PCN075 SW15PCR075 |
Stud Base Silicon Rectifier Diodes
|
Westcode Semiconductors
|
| 150UR160 150U100 150U120 150U140 150U160 150U20 15 |
Standard Recovery Diodes (Stud and Flat Base Type)
SILICON POWER DIODE
|
Naina Semiconductor ltd.
|
| NTE5825 NTE5818 NTE5819 NTE5823 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp
Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
|
NTE[NTE Electronics]
|
| 300UR160 300U10 300U100 300U120 300U140 300U160 30 |
Standard Recovery Diodes (Stud and Flat Base Type)
|
Naina Semiconductor ltd.
Naina Semiconductor ltd...
|
| R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN
300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN
300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN
1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN
350 A, 2200 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
200 A, 1500 V, SILICON, RECTIFIER DIODE
1500 A, 1200 V, SILICON, RECTIFIER DIODE
125 A, 800 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
400 A, 200 V, SILICON, RECTIFIER DIODE
800 A, 3200 V, SILICON, RECTIFIER DIODE
350 A, 700 V, SILICON, RECTIFIER DIODE
400 A, 900 V, SILICON, RECTIFIER DIODE
100 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1700 V, SILICON, RECTIFIER DIODE
800 A, 3100 V, SILICON, RECTIFIER DIODE
250 A, 50 V, SILICON, RECTIFIER DIODE
800 A, 3600 V, SILICON, RECTIFIER DIODE
330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX INC
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 250NS |
Standard Recovery Diodes (Stud and Flat Base Type)
|
Naina Semiconductor ltd...
|
| CPR2-040TRLEADFREE CPR2-010TRLEADFREE CPR2-120TRLE |
2 A, 400 V, SILICON, RECTIFIER DIODE
2 A, 100 V, SILICON, RECTIFIER DIODE
2 A, 1200 V, SILICON, RECTIFIER DIODE
2 A, 200 V, SILICON, RECTIFIER DIODE
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| UFT120 UFT12010 UFT12015 UFT12020 UFT12130 UFT1214 |
60 A, 500 V, SILICON, RECTIFIER DIODE
60 A, 700 V, SILICON, RECTIFIER DIODE
ULTRA FAST RECOVERY MODULES 60 A, 100 V, SILICON, RECTIFIER DIODE
60 A, 800 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| MR750RL MR751RL MR752RL MR754RL |
6A 50V Silicon Rectifier
6A 100V Silicon Rectifier
6A 200V Silicon Rectifier
6A 400V Silicon Rectifier
|
ON Semiconductor
|
|
