| PART |
Description |
Maker |
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| IXRH50N80 IXRH50N60 |
IGBT with Reverse Blocking capability
|
IXYS[IXYS Corporation]
|
| TIC106A TIC106B TIC106C TIC106D TIC106E TIC106M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| TIC116A TIC116B TIC116C TIC116D TIC116E TIC116M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| TIC126A TIC126B TIC126C TIC126D TIC126E TIC126M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| TIC106A TIC106B TIC106C |
(TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductors
|
| MCR8DCM-D |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| IXRH40N120 |
Power Discretes/IGBTs/Reverse Blocking Series
|
IXYS Corporation
|
| 2N6394-D |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MCR202 MCR203 MCR204 MCR206 |
SILICON CONTROLLDE RECTIFIERS REVERSE BLOCKING TRIODE THYRISTORS
|
http://
Motorola, Inc
|
