| PART |
Description |
Maker |
| EA61FC6 |
FRD - Low Power Loss
|
NIEC[Nihon Inter Electronics Corporation]
|
| EA31FS2 |
FRD - Low Power Loss
|
Nihon Inter Electronics Corporation
|
| HPQ-09W HPQ-06 HPQ-10 HPQ-10W HPQ-04 HPQ-07 HPQ-08 |
POWER SPLITTERS/COMBINERS 690 MHz - 830 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 880 MHz - 1030 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 730 MHz - 800 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 315 MHz - 395 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 580 MHz - 690 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 680 MHz - 790 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 480 MHz - 600 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 1700 MHz - 2400 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.71 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 990 MHz - 1100 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
|
Mini-Circuits
|
| EP05Q04 |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
LOW POWER LOSS/ HIGH EFFICIENCY
LOW POWER LOSS HIGH EFFICIENCY
LOW POWER LOSS, HIGH EFFICIENCY
|
ETC[ETC]
Nihon Inter Electronics Corporation
|
| 30PRA60 |
FRD - 3A 600A 210ns
FRD HIGH SURGE CAPABILITY
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
| CBD20200VCTT010001 CBD20200VCTT000001 |
Ultra Low forward voltage drop, low power loss
|
Pan Jit International Inc.
|
| SBM3060VFCT |
Ultra low forward voltage drop, low power loss
|
Pan Jit International Inc.
|
| APT20M20JFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 106A 0.020 Ohm
|
Advanced Power Technology Ltd.
|
