| PART |
Description |
Maker |
| EC31QS10 |
SBD
SDR Connector; No. of Contacts:14; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 1.3 A, 100 V, SILICON, RECTIFIER DIODE
Low Forward Voltage drop Diode
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| 91804-0452 |
4XLL F W/CPAP O/PNL MNT W/4 SDR POSTS 25 CONTACT(S), FEMALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SURFACE MOUNT
|
Molex, Inc.
|
| D4SBS6 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| MCH5810 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
| C10T04Q-11A |
Circular Connector; No. of Contacts:26; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-26
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
|
| DE9944 |
SDR Demonstrator
|
CML Microcircuits
|
| AN10935 |
Using SDR/DDR SDRAM memories
|
NXP
|
| CYD36S36V18 CYD36S72V18 CYD36S18V18 |
FullFlex Synchronous SDR Dual-Port SRAM(FullFlex同步SDR双端口SRAM)
|
Cypress Semiconductor Corp.
|
| H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5 |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| H55S2622JFR-60M H55S2532JFR-60M H55S2622JFR-75M H5 |
256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| H55S2562JFR-60M H55S2562JFR-75M H55S2562JFR-A3M |
256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
