| PART |
Description |
Maker |
| ECH42 |
TRIODE HEXODE Oscillateur de frequence
|
ETC[ETC]
|
| SM25JZ51 SM25GZ51 |
BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| 3CW20000A3 |
The 3CW20,000A3 is a medium-mu power triode
The 3CW20,000A3 is a medium-mu power triode
|
Communications & Power Industries, Inc.
|
| 3CW20000H7 |
The 3CW20,000H7 is a high-mu power triode
The 3CW20,000H7 is a high-mu power triode
|
Communications & Power Industries, Inc.
|
| S525T S525 |
N?Channel MOS-Fieldeffect Triode, Depletion Mode
From old datasheet system
N-Channel MOS-Fieldeffect Triode, Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SM6J45A SM6G45 SM6G45A SM6J45 |
BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TO-220 .75H .57W .5D W/MTG TAB
Heat Sink; Package/Case:TO-220; Body Material:Aluminum; Thermal Resistance:27.3 C/W; Color:Black; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No; Size/Dimensions:0.750H x 0.500W"
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| 4021C |
TRIODE
|
ETC
|
| 21LR8 |
TRIODE-PENTODE
|
General Electric Company
|
| PC97 |
TRIODE FOR USE AS R.F. AMPLIFIER
|
NXP Semiconductors
|
| ITL5-1 |
Power Triode
|
Electronic Theatre Controls, Inc.
|
| ECF80 |
TRIODE-PENTODE
|
NXP Semiconductors
|
