| PART |
Description |
Maker |
| ESCJ-2-5TR ESCJ-2-5 |
SX Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 125 Vac, 1 A, Pin Plunger Actuator, Solder Termination E系列280功分5 - 200兆赫
E-Series 2-Way 180 Power Divider 5 - 200 MHz E系列280功分5 - 200兆赫
|
TE Connectivity, Ltd.
MACOM[Tyco Electronics]
|
| OLS-180MW-XD-T OLS-180UW-XD-T |
Series 180 - 0805 lower height white
|
OSA Opto Light GmbH
|
| OIS-180880 OIS-180880-X-T |
Series 180 - 0805 lower height IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| IRKHF180-12HK IRKHF180-04HK IRKLF180-08HK IRKLF180 |
180 A, MAGN-A-pak Power Modules(180A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块)
180 A, MAGN-A-pak Power Modules(180A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
180 A, MAGN-A-pak Power Modules(180A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 180甲，磁共甲柏功率模块80AV的，快速可控硅/二极结构磁共甲柏功率模块
180 A, MAGN-A-pak Power Modules(180A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块) 180甲，磁共甲柏功率模块80AV电压，快速可控硅/二极结构磁共甲柏功率模块
|
International Rectifier, Corp.
|
| MAX1858EEG MAX1858 |
Dual 180 Out-of-Phase PWM Step-Down Controller with Power Sequencing and POR
Dual 180° Out-of-Phase PWM Step-Down Controller with Power Sequencing and POR
Dual 180∑ Out-of-Phase PWM Step-Down Controller with Power Sequencing and POR
From old datasheet system
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| FSL13A0R4 FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FS |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2SB1317P |
15 A, 180 V, PNP, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| 2SK409 |
2 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|
| 2N7224TX |
34 A, 180 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
HARRIS SEMICONDUCTOR
|
| 2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| EL2002ACN EL2002C EL2002CM EL2002CN |
Low Power/ 180 MHz Buffer Amplifier
|
Elantec
|
| STH260N6F6-2 |
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE Power MOSFET in H2PAK-2 package
|
ST Microelectronics
STMicroelectronics
|
|
