| PART |
Description |
Maker |
| QEE122 QEE123 |
AIGAAS INFRARED EMITTING DIODE
|
QT Optoelectronics
|
| MIE-514L3 514L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| MIE-134G2 134G2 |
Infrared Emitting Diodes (IRED)
GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSUS4300 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| SEP8706-003 |
SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package
|
Honeywell Accelerometers
|
| TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| LNA2802L |
GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
| OED-EL-1L2 |
5 mm, 1 ELEMENT, INFRARED LED, 940 nm LEAD FREE PACKAGE-2
T-5mm, 940mm INFRARED EMITTING DIODE
|
Lumex, Inc.
LUMEX INC.
|
