| PART |
Description |
Maker |
| S560-6611-20 |
ADSL Magnetics Fujitsu
|
BEL[Bel Fuse Inc.]
|
| S560-6600-T6 |
ADSL Magnetics Fujitsu
|
Bel Fuse Inc.
|
| 2SC2028 2SC2028_2 2SC2028/2 |
FUJITSU TRANSISTOR
From old datasheet system
|
Fujitsu Microelectronics
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Limited
|
| AEP800-S AEP800-T |
ADSL Transformers for Fujitsu Chipsets
|
Nuvotem Talema
|
| P756E94 |
FUJITSU Desktop ESPRIMO P756/E94
|
Fujitsu Component Limit...
|
| D756E94 |
FUJITSU Desktop ESPRIMO D756/E94
|
Fujitsu Component Limit...
|
| MB86H50 |
The Fujitsu H.264 Format Video-Processing IC
|
Fujitsu Microelectronics, Inc.
|
| MAX487 MAX487E MAX487ECPA MAX487ECSA MAX487EEPA MA |
??5kV ESD-Protected, Slew-Rate-Limited, Low-Power, RS-485/RS-422 Transceivers
Low-Power / Slew-Rate-Limited RS-485/RS-422 Transceivers
3.3/5-V RS-485 Transceiver 8-SOIC -40 to 85
15kV ESD-Protected / Slew-Rate-Limited / Low-Power / RS-485/RS-422 Transceivers
【15kV ESD-Protected, Slew-Rate-Limited, Low-Power, RS-485/RS-422 Transceivers
From old datasheet system
" ?à15kV ESD-Protected, Slew-Rate Limited, Low-Power, RS-485/RS-422 Transceivers"
±15kV ESD-Protected, Slew-Rate-Limited, Low-Power, RS-485/RS-422 Transceivers
±15kV ESD-Protected, Slew-Rate-Limited,
Low-Power, RS-485/RS-422 Transceivers
卤15kV ESD-Protected, Slew-Rate-Limited, Low-Power, RS-485/RS-422 Transceivers
±15kV ESD-Protected, Slew-Rate Limited, Low-Power, RS-485/RS-422 Transceivers
|
Maxim Integrated Produc...
MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
http://
MAXIM - Dallas Semiconductor
|
| MIC-3960 MIC-3960-AE |
6U CompactPCI庐 Media Carrier Board
6U CompactPCI? Media Carrier Board
|
Advantech Co., Ltd.
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| A1806UC4RP P0300SCMC |
SIDACtor devices
solid state crowbar devices
|
Teccor Electronics
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
|
