| PART |
Description |
Maker |
| NCP1050ST100 NCP1050ST44 NCP1052P136 NCP1050/D NCP |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
2 A SWITCHING REGULATOR, 50 kHz SWITCHING FREQ-MAX, PDSO4
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 2 A SWITCHING REGULATOR, 154 kHz SWITCHING FREQ-MAX, PDIP8
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 24字符X2行，5X7点矩阵字符和光标
|
ON Semiconductor
|
| MIG20J806HA MIG20J806H EE08617 |
Silicon N-channel integrated IGBT module for high power switching, motor control applications
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的（大功率开关，马达控制应用
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| HAT1047R HAT1047RJ |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HAT2215R HAT2215R-EL-E HAT2215RJ HAT2215RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HAT1055R HAT1055RJ |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ553 2SJ553L 2SJ553S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http://
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http://
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MP4201 E002500 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| 2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply)
High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
High-voltage Switching Transistor ( 400V, 0.5A)
|
ROHM[Rohm]
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
