| PART |
Description |
Maker |
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR430B IRFU430B IRFR430BTM |
500V N-Channel B-FET / Substitute of IRFR430A
500V N-Channel MOSFET
|
International Rectifier
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW820B IRFI820B IRFW820BTM |
500V N-Channel B-FET / Substitute of IRFW820A
500V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQE10N20LC FQE10N20LCTU |
200V N-Channel Advance Q-FET C-Series
200V Logic N-Channel MOSFET 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQP16N25C FQPF16N25C |
250V N-Channel MOSFET 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQD10N20C FQU10N20C FQD10N20CTM FQD10N20CTF FQU10N |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQI6N40C FQB6N40C FQB6N40CTM FQI6N40CTU |
400V N-Channel MOSFET
400V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF6N80C FQP6N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP7N65C FQPF7N65C |
650V N-Channel Advance Q-FET C-Series
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF3N80C FQP3N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF6N90C FQP6N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQE10N20C FQE10N20CTU |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
