| PART |
Description |
Maker |
| STD1NB80- STD1NB80-1 6190 STD1NB80 |
N-CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET
N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET
N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET
N - CHANNEL 800V - 16 - 1A - IPAK PowerMESH TM MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB7NC80Z STB7NC80Z-1 STP7NC80ZFP STP7NC80Z STBB7N |
6.5 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL MOSFET
New Generation Twisted Paired Multiconductor Audio Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 1.3 OHM - 6.5A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| FQP8N80C FQPF8N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFIBE20G |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A)
GT 19C 19#12 SKT RECP BOX
|
IRF[International Rectifier]
|
| STU9NC80Z STU9NC80ZI STU9NC80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?III MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STP4NC80Z STB4NC80ZT4 STB4NC80Z-1 STB4NC80Z STP4NC |
N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET N沟道800V.4欧姆4A条到22020FP采用D2PAK I2PAK稳压第三MOSFET的保护POWERMESH
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800V 2.4ohm - 4A条TO-220/FP/D2PAK/I2PAK齐保护的PowerMESH⑩三MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| 2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）|47
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|20
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247
MOSFET transistors
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220
TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp.
Mallory Sonalert Products, Inc.
Fuji Semiconductors, Inc.
|
| STP3NB80 STP3NB80FP 5954 |
N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET -频道800V 4.6ohm - 2.6A的电 TO-220/TO-220FP PowerMESH MOSFET
From old datasheet system
N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET
N - CHANNEL 800V - 4.6 Ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| FQI3N80 FQB3N80 FQI3N80TU |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
