| PART |
Description |
Maker |
| 62C256 IS62C256-7 IS62C256-4 IS62C256-70T IS62C256 |
32K x 8 Low Power CMOS Static RAM(32K x 8 浣????MOS???RAM)
32K x 8 LOW POWER CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
ETC[ETC]
Integrated Silicon Solution Inc
|
| LY62256RL-35LL LY62256RL-35LLE LY62256RL-35LLET LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62256SL LY62256SV LY62256RL LY62256 LY62256DL LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| UT62256BLS-35LL UT62256BLS-35L UT62256BLS-70L UT62 |
32K X 8 BIT LOW POWER (6T) CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| UT62256CPC |
32K X 8 BIT LOW POWER CMOS SRAM
|
UTRON
|
| P4C1256L70SNILF P4C1256L55PILF P4C1256L70PCLF P4C1 |
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 55 ns, PDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, PDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, CDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 55 ns, PDSO28
|
Pyramid Semiconductor, Corp.
|
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| IDT71256SA20PZI IDT71256SAPZGI8 IDT71256SATPGI8 ID |
CMOS Static RAM 256K (32K x 8-Bit) Low power consumption via chip deselect
|
Integrated Device Technology
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| T15V256A-85RI T15V256A T15V256A-70D T15V256A-70DI |
32K X 8 LOW POWER CMOS STATIC RAM
|
TMT[Taiwan Memory Technology]
|
| T15V256A03 |
32K X 8 LOW POWER CMOS STATIC RAM
|
Taiwan Memory Technology
|
