PART |
Description |
Maker |
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
RJP4003ANS-00-Q1 RJP4003ANS |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP5001APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP4007ANS |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY25AAJ-8 CY25AAJ-8-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP4006AGE |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation POWEREX [Powerex Power Semiconductors] POWEREX[Powerex Power Semiconductors]
|