PART |
Description |
Maker |
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
GT20G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT25G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT5G133 |
IGBT for strobe flash
|
TOSHIBA
|
GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
RJP4003ASA-0-Q0 RJP4003ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP5001APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
2SA1357 E000517 |
TRANSISTOR (STROBE FLASH/ AUDIO POWER AMPLIFIER APPLICATIONS) TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS) STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIERAPPLICATIONS From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
CT40KM-8H |
Transistors>IGBT>for Stlobe use Nch IGBT for Strobe Flasher
|
RENESAS[Renesas Electronics Corporation]
|