| PART |
Description |
Maker |
| HAT1026R-EL-E HAT1026R |
7 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| INK0002AX08 INK0002AC1 INK0002AU1 INK0002AM1 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
| BF999 Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications)
From old datasheet system
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| RJM0306JSP-00-J0 RJM0306JSP |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL6020DPK RJL6020DPK-00-T0 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL6013DPP RJL6013DPP-00-T2 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2305PF |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation.
|
| RJK6020DPK-00-T0 RJK6020DPK |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
