| PART |
Description |
Maker |
| HGTG34N100E2 |
34A/ 1000V N-Channel IGBT
34A, 1000V N-Channel IGBT
|
INTERSIL[Intersil Corporation]
|
| APT10025JVFR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| STTH1502FP STW34NB2004 W34NB20 STW34NB20 STW34NB20 |
N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| FGA50N100BNTD2 |
1000V, NPT Trench IGBT
|
Fairchild Semiconductor
|
| IXGA4N100 IXGP4N100 |
1000V IGBT
ADVANCED TECHNICAL INFORMATION
|
IXYS Corporation
|
| FGL60N100BNTDTUNL |
1000V, 60A NPT-Trench IGBT
|
FAIRCHILD SEMICONDUCTOR CORP
|
| MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
| IXGH12N100A |
1000V low voltage high speed IGBT
|
IXYS
|
| FGH40T100SMD |
1000V, 40A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
