| PART |
Description |
Maker |
| SLD104AV |
GaAlAs Laser Diode Developed For CD(镓铝砷激光二极管(用于CD播放)
|
Sony Corporation
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LNC802PS |
GaAlAs Semiconductor Laser
|
PANASONIC[Panasonic Semiconductor]
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| DL-3150-103 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
| NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
