| PART |
Description |
Maker |
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11 |
1310 nm, LASER DIODE
MITSUBISHI LASER DIODES InGaAsP DFB LASER DIODES 三菱激光二极管InGaAsP的DFB激光器
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| NX6414EH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION
|
California Eastern Labs
Renesas Electronics Corporation
|
| M66512P M66512FP M66512 |
From old datasheet system
LASER-DIODE LASER-DIODE DRIVER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| DL-7140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| OL3204N-40 OL3201N-40 |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1280-1330nm, THROUGH HOLE MOUNT, FC CONNECTOR
1.3 レm High-Power Laser-Diode DIP Module 1.3レ米高功率激光二极管双酯模块
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle 1.3レ米高功率激光二极管双酯模块
1.3 μm High-Power Laser-Diode DIP Module
1.3 m High-Power Laser-Diode DIP Module
|
LAPIS SEMICONDUCTOR CO LTD
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| STH51002Z TH51002Z |
From old datasheet system
1300nm Laser in Coaxial TO-Package 1280 nm, LASER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
