| PART |
Description |
Maker |
| HYB39S128160FE HYB39S128160FEL |
128-MBit Synchronous DRAM
|
Qimonda
|
| CY7C109D-10ZXI CY7C1009D-10VXI CY7C109D-10VXI |
1-Mbit (128 K × 8) Static RAM Low active power
|
Cypress Semiconductor
|
| IS45S32400B-7TLA IS45S32400B-7TLA1 IS45S32400B-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| IS42S32400B-6BL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
http://
|
| CY62136ESL-45ZSXI CY62136ESL1106 |
2-Mbit (128 K x 16) Static RAM Ultra low standby power
|
Cypress Semiconductor
|
| IS42S16800A1 IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| IC42S16800L IC42S16800 IC42S16800-7T IC42S16800-7T |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| 42S16800A IS42S16800A IS42S16800A-6T IS42S16800A-7 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution Inc
|
| HYB39SC128160FE-6 HYI39SC128160FE-6 |
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
