| PART |
Description |
Maker |
| HYS72D64301 |
184 - Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda
|
| HYS72D128321HBR-5-C HYS72D256320HBR-5-C HYS72D1283 |
184-Pin Registered Double-Data-Rate SDRAM Module
|
http://
|
| HYS72D64320GBR-7-B |
184 - Pin Registered Double Data Rate SDRAM Modules
|
http://
|
| HYS64D32301HU-5-B HYS64D64300GU-5-B HYS72D64300GU- |
42184-Pin Unbuffered Double-Data-Rate Memory Modules
|
Qimonda AG
|
| HYMD512G726BF8N-D43 HYMD512G726BF8N-J HYMD512G726B |
Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Registered DIMM 1GB
|
http://
Hynix Semiconductor, Inc.
|
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| HD68450Y-6 HD68450Y-8 HD68450-10 |
DMA Controller
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Solder Termination DMA控制
|
Omron Electronics, LLC
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| W631GG6KB-15 W631GG6KB12A W631GG6KB12I W631GG6KB12 |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| HYMD564646BXX |
184 Pin Unbuffered DDR SDRAM DIMMs Based on 512Mb B ver
|
Hynix Semiconductor
|
