| PART |
Description |
Maker |
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HYS72D32300GBR-6-C HYS72D64320GBR-6-C HYS72D128320 |
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 2-bank; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 1-bank; Available 3Q04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 256 MB (32Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 1 GB (128Mx72) PC2700 2-bank; Available 2Q04
184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
| IC43R16160-7TG IC43R16160-6TG |
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM 4米16位4个银行（256兆）DDR SDRAM内存
|
Panasonic, Corp.
|
| M368L3313DTL-CA2 M368L3313DTL-CB3 M368L3313DTL-CB0 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns.
DDR SDRAM Specification Version 0.61
128Mb DDR SDRAM
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB25D128160CE-6 HYB25D128400CE-6 HYB25D128800CE-6 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM Components - 128Mb (32Mx4) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM Components - 128Mb (16Mx8) DDR333 (2.5-3-3); Available 2Q04
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
| PI3B4010NC PI3B4010 |
3.3V, High-Bandwidth, 40:10-Bit DDR Mux/Demux NanoSwitch
|
PERICOM[Pericom Semiconductor Corporation]
|
