| PART |
Description |
Maker |
| IS9-1825ASRH_PROTO 5962F0251101QEC 5962F0251101QXC |
Single Event and Total Dose Hardened, High-Speed, Dual Output PWM SWITCHING CONTROLLER, 425 kHz SWITCHING FREQ-MAX, CDFP20
Single Event and Total Dose Hardened, High-Speed, Dual Output PWM 1 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, CDIP16
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Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| PSD501B1-12U PSD502B1-12U PSD513B1-12U PSD511B1-12 |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57Z30 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7250 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7054 with optional Total Dose Rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7160 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 500kRads
600V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; Similar to IRHN7C50SE with optional Total Dose Rating of 50kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA57260 with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ7130 with optional Total Dose Rating of 1000kRads
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package; A IRHNJ57234SE with Standard Packaging
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB770Z4 with Standard Packaging and Total Dose of 100K Rads (Si)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; JANS Certified device. Equivalent to IR Part Number IRHNA57260SE
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package; A IRH7250SE with Standard Packaging
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM9150 with optional Total Dose Rating of 300kRads
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9160 with optional Total Dose Rating of 300kRads 现场可编程外
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; A IRH9250 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package; A JANSR2N7382 with Standard Packaging 现场可编程外
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A JANSR2N7424 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ597130 with optional Total Dose Rating of 300kRads 现场可编程外
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7130 with optional Total Dose Rating of 300kRads 现场可编程外
Field-Programmable Peripheral 现场可编程外
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57034 with optional Total Dose Rating of 1000kRads 现场可编程外
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7Z60 with optional Total Dose Rating of 500kRads 现场可编程外
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Fluke, Corp.
飞思卡尔半导体(中国)有限公司
Alliance Semiconductor, Corp.
Atmel, Corp.
Bourns, Inc.
|
| AM29C833PC AM29C833A/B3A AM29C853A/B3A AM29C853/B3 |
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 300kRads
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH9250 with optional Total Dose Rating of 300kRads
60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package; A IRHLF7970Z4 with Standard Packaging
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 300kRads
150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package also available with Total Dose Rating of 300kRads; A IRHYS67134CM with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57130 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package; Similar to IRHMJ7250 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 1000kRads
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package; Similar to IRHYS597Z30CM with optional Total Dose Rating of 300kRads 位总线收发
60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB7970Z4 with Standard Packaging 位总线收发
Single 8-bit Bus Transceiver 位总线收发
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM9130 with Standard Packaging 位总线收发
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Vectron International, Inc.
Advanced Micro Devices, Inc.
EPCOS AG
3M Company
|
| AM29C60-1JCB AM29C60A/BYC AM29C60-1/BXC AM29C60-1D |
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package; Similar to IRHN9130 with optional Total Dose Rating of 300kRads
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA597064 with Standard Packaging
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package; Similar to IRH9130 with optional Total Dose Rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; A IRHLF77110 with Standard Packaging
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package; A IRHMS57163SE with Standard Packaging
250V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package. Also available with Total Dose Rating of 300kRads.; A IRHMS67264 with Standard Packaging
250V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package. Also available with Total Dose Rating of 300kRads.; Similar to IRHMS67264 with Total Dose Rating of 300kRads.
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package; JANS Certified device. Equivalent to IR Part Number IRHF57230SE
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package; Similar to IRHE57034 with optional Total Dose Rating of 500kRads
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package; Similar to IRHE57034 with optional Total Dose rating of 1000kRads
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package; A IRHNJ9130 with Standard Packaging
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; A IRHN7450SE with Standard Packaging
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHMS597260 with optional Total Dose Rating of 300kRads
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package; A IRHNB7460SE with Standard Packaging
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package; JANS Certified version of the IRHE57034 with optional Total Dose Rating of 500kRads 错误检
|
Amphenol, Corp.
|
| UT54LVDS032-UPX 5962H9583401QXA 5962H9583401QXC 59 |
Quad receiver: SMD. QML class V. Lead finish factory option. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish hot solder dipped. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish gold. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish gold. Total dose 1E6 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish gold. Total dose 1E6 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Quad Receiver 四接收机
Triple 3-input positive-AND gates 14-PDIP 0 to 70
Quad receiver: SMD. QML class Q. Lead finish hot solder dipped. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish factory option. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish gold. Total dose 5E5 rad(Si).
|
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Circuit Techno...
|
| 5962R9865203VYC 5962G9865202QYC 5962F9865202VYA 59 |
Low voltage quad receiver: SMD. QML class V. Lead finish gold. Total dose 1E5 rad(Si).
Low voltage quad receiver: SMD. QML class Q. Lead finish gold. Total dose 5E5 rad(Si).
Low voltage quad receiver: SMD. QML class V. Lead finish hot solder dipped. Total dose 3E5 rad(Si).
Low voltage quad receiver: SMD. QML class V. Lead finish gold. Total dose 3E5 rad(Si).
|
Aeroflex Circuit Technology
|
| RDHA701CD10A2NK |
Neutron and Total Ionizing Dose Test
|
International Rectifier
|
| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| AM29C943DE AM29C941PC AM29C941DC |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package; Similar to IRHG6110 with optional Total Dose Rating of 300kRads
100V Quad N-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ7110 with optional Total Dose Rating of 500kRads 10位D型锁存器
100V Quad P-Channel MOSFET in a 28-pin LCC package; A IRHQ9110 with Standard Packaging 10位D型锁存器
|
FCI
NXP Semiconductors N.V.
|
| 5962F0254201QXC 5962F0254201VXC ISL7124SRH ISL7124 |
Operational Amplifier 运算放大
Single-Event Hardened, Single Supply, Quad Operational Amplifier
Operational Amplifier, Single-Event Rad-Hard, Single Supply, Quad, 0.3V/s Slew Rate
Single-Event Hardened/ Single Supply/ Quad Operational Amplifier
1.0 Amp Power Operational Amplifier
|
Brady, Corp.
Intersil Corporation
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
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Aeroflex Circuit Technology
|
| 5962F0151701QXA 5962F0151701QXC 5962F0151701QXX 59 |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish optional.
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Aeroflex Circuit Technology
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