| PART |
Description |
Maker |
| IXDN55N120D1 IXDN55N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| IXDR35N60BD1 |
IGBT Discretes: NPT IGBT
|
IXYS
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
| SGD04N60 |
Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
Infineon Technologies AG
|
| IXGR120N60B |
HiPerFASTTM IGBT ISOPLUS247TM
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS Corporation
|
| IXGT35N120C IXGH35N120 IXGH35N120C |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
IGBT Lightspeed Series
|
IXYS[IXYS Corporation]
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 S |
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技
IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IXGT20N100 IXGH20N100 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS Corporation
|
| FID36-06D |
IGBT Discretes
IGBT Chopper in ISOPLUS i4-PACTM
From old datasheet system
|
IXYS[IXYS Corporation]
|
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
