| PART |
Description |
Maker |
| K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/ |
128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格
RESISTOR, 2M OHM, 0.063W, 1%
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| K4S281632K |
128Mb K-die SDRAM
|
Samsung
|
| HY5DU28822BT-X HY5DU28822BT HY5DU28822BLT-X HY5DU2 |
DDR SDRAM - 128Mb
128M-S DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4 |
128Mb F-die SDRAM Specification
128Mb E-die SDRAM Specification
|
Samsung Electronic
Samsung semiconductor
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMD116725BL8-H HYMD116725BL8-K HYMD116725BL8-L HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
16Mx72|2.5V|M/K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| HY5DU28422ET |
128Mb DDR SDRAM
|
Hynix Semiconductor
|
| EBD12UB8ALF-75 EBD12UB8ALF-7A EBD12UB8ALF-1A |
128MB Unbuffered DDR SDRAM DIMM
|
Elpida Memory
|
| W3EG7218S265BD4 W3EG7218S202AD4 W3EG7218S202BD4 W3 |
128MB - 16Mx72 DDR SDRAM UNBUFFERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
