| PART |
Description |
Maker |
| K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
| K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V1 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 8M x 16Bit Synchronous DRAM
SDRAM|4X8MX16|CMOS|TSOP|54PIN|PLASTIC 内存| 4X8MX16 |的CMOS |的TSOP | 54PIN |塑料
|
HYNIX SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
|
| GM72V28441ALT-7J |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| IS42S16320B-7BL IS42S16320B-7BLI IS42S16320B IS42S |
64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
|
http://
Integrated Silicon Solution, Inc
|
| HYB39S128800FT-7 HYB39S128400FTL-7 HYB39S128400FT- |
128-MBit Synchronous DRAM 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
| EM68B16DVAA-6H EM68B16DVAA-75H EM68B16DVAA |
32M x 16 Mobile DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| THMY6432G1EG-80 |
32M Word x 64 Bit Synchronous DRAM Module(32Mx 64位同步动态RAM模块)
|
Toshiba Corporation
|
| AS4C32M16D1A AS4C32M16D1A-5TCN AS4C32M16D1A-5TIN A |
32M x 16 bit DDR Synchronous DRAM
Internal pipeline architecture
|
Alliance Semiconductor ...
|
