| PART |
Description |
Maker |
| K4R271669D-TCS8 K4R271669D K4R271669D-T |
128Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM)
144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM
128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 18A 18B |
18A/18B Series Potted Gas Plasma Arresters
GIGABASE 350 CAT5E PATCH 25 FT, SNAGLESS, PINK
|
LITTELFUSE[Littelfuse]
Littelfuse, Inc.
|
| ELC11D8R2F ELC09D4R7F ELC11D4R7F ELC12D472E |
Choke Coils - General type 09D, 11D, 12D, 16B, 18B(Ferrite core type)
|
Panasonic
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
| IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form
|
Hittite Microwave Corporation
International Rectifier
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
