| PART |
Description |
Maker |
| 2N526 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SD1843 2SD1843-T |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN硅外延晶体管（达林顿接线）低频功率放大器和低速开
Low-freq. power amp., low-speed switching power tr.
|
NEC, Corp.
NEC[NEC]
|
| 310-025107-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024103-022 024103-022 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-024109-011 024109-011 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025105-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025107-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 2SB544 2SD400 2SD400E 2SD400D 2SD400F 2SB544G 2SB5 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-92VAR
Low-Frequency Power Amp, Electronic Governor Applications
Low-Frequency Power Amp Electronic Governor Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SC3265 |
NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER/ POWER SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
