| PART |
Description |
Maker |
| RF6100-2 |
RF Micro Devices 3V 900 MHz Linear Amplifier 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| U2762B-BFSG3 U2762B U2762B-BFS |
900-MHz ISM Band Receiver
|
TEMIC[TEMIC Semiconductors]
|
| CXA1852N |
Quadrature Modulator for 900 MHz-Band Mobile
|
SONY
|
| U2762B |
900-MHz ISM Band Receiver
From old datasheet system
|
Atmel
|
| ESLB-P245BB ESLB-P245BB-2 ESLB-P245BB-1 |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| CXA1851 CXA1851N |
From old datasheet system
Up/Down Converter for 900 MHz-Band Mobile Communications
|
SONY[Sony Corporation]
|
| TS9224IYPT |
QUAD OP-AMP, 900 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
|
STMICROELECTRONICS
|
| 2SK3077 2SK307707 |
SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
Toshiba Semiconductor
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| BGA736L16 |
Tri-Band HSDPA LNA (2100, 1900/2100, 800/900 MHz)
|
Infineon Technologies AG
|
