| PART |
Description |
Maker |
| LNA4401L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LNA2801L |
GaAlAs on GaAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| MIE-324H4 324H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管
Infrared Emitting Diodes (IRED) 红外发光二极管（登记合格决定
|
Unity Opto Technology Co., Ltd.
Vishay Intertechnology, Inc.
UOT[Unity Opto Technology]
|
| TSHA440. TSHA4400 TSHA440 TSHA4401 |
GaAlAs Infrared Emitting Diodes in ?3 mm (T-1) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in 3 mm (T-1) Package
GaAlAs Infrared Emitting Diodes in ? 3 mm (T?1)Package
|
VISAY[Vishay Siliconix]
TFUNK[Vishay Telefunken]
|
| LNA2802L |
GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| SIM-20ST |
Sensors > Infrared Light Emitting Diodes
Infrared light emitting diode/ side-view type
Infrared Light Emitting Diode, Side-view Type(红外光发射二极管)
|
Rohm CO.,LTD.
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KLB-16AI-94 |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| VTE3374LA VTE3372LA VTE3373LA |
GaAlAs Infrared Emitting Diodes
|
PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
PerkinElmer Inc.
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
