| PART |
Description |
Maker |
| M29DW128F M29DW128F60NF1 M29DW128F60NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位16Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位6Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M30L0R7000XX M30L0R7000B0 M30L0R7000B0ZAQ M30L0R70 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128FB85ZB6T |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M58LR128F-ZB M58LR128F-ZBE M58LR128F-ZBF M58LR128F |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| M30L0R7000T0ZAQE M30L0R7000B0ZAQ M30L0R7000XX M30L |
AB 35C 7#12,28#16 PIN RECP
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 128兆位兆x16插槽，多银行，多层次，多突发），1.8V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| M58LW064D110ZA6 M58LW64D M58LW064D M58LW064D110N1 |
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L0R8000B0ZAQF |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M29DW640D70N1T M29DW640D70ZA1E M29DW640D70N6 M29DW |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
