PART |
Description |
Maker |
MCM72F7ADG9 MCM72F6A MCM72F6ADG10 MCM72F6ADG12 MCM |
512KB and 1MB Synchronous Fast Static RAM Module
|
MOTOROLA[Motorola, Inc]
|
MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM 12ns 100MHz 32K x 32 1Mb synchronous burst SRAM 10ns 133MHz 32K x 32 1Mb synchronous burst SRAM 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM 11ns 117MHz 32K x 32 1Mb synchronous burst SRAM 9ns 150MHz 32K x 32 1Mb synchronous burst SRAM 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储 81兆812KB × 16低压紫外线存储器和OTP存储 8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
29F800 M29F800AB M29F800AT -M295V800AB90N3T M295V8 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:28; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle; Body Style:Straight RoHS Compliant: No 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics 意法半导 STMicroelectronics
|
M29F800AB70N1 M29F800AB70N6 M29F800AB70M1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
ST Microelectronics
|
MPC2105BSG66 MPC2105ASG66 MPC2105A MPC2106ASG66 MP |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc MOTOROLA[Motorola Inc]
|
M29W800DB M29W800DT M29W800DB70M1T M29W800DB70M6T |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory Low-Power Configurable Multiple-Function Gate 6-SOT-23 -40 to 85 8兆(1兆x812KB的x16插槽,引导块V电源快闪记忆 Low-Power Configurable Multiple-Function Gate 6-DSBGA -40 to 85 8兆(1兆x812KB的x16插槽,引导块V电源快闪记忆 8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory
|
STMicroelectronics N.V. ST Microelectronics
|
UPD4382361GF-A85 UPD4382321GF-A85 UPD4382361GF-A90 |
x32 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
Samsung Semiconductor Co., Ltd.
|
CXK79M72C164GB CXK79M36C164GB |
18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
|
Sony Corporation
|
CXK79M72C165GB CXK79M36C165GB |
18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
|
Sony Corporation
|
MT58LC64K32G1LG-5 MT58LC64K32G1LG-10 MT58LC64K32G1 |
x32 Fast Synchronous SRAM x18 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM
|
Amphenol, Corp.
|