| PART |
Description |
Maker |
| MCTV75P60E1 MCTA75P60E1 |
75A / 600V P-Type MOS Controlled Thyristor (MCT)
75A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
| R6035KNZC8 |
Nch 600V 35A Power MOSFET
|
ROHM
|
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| BD350006 BD3506 BD3500 BD3501 BD3502 BD3503 BD3504 |
35A BOSCH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| BD3520 |
35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE
|
Won-Top Electronics Co., Ltd.
|
| MD3524 MD3520 |
35A AVALANCHE MOTOROLA TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| RJJ0315DPA-15 |
-30V, -35A, 5.9mΩmax. P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| DD350 DD356S DD350S DD351 DD351S DD352 DD352S DD35 |
35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
