| PART |
Description |
Maker |
| MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
6.4-7.2 GHz Band 16W Internally Matched GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5258_04 MGFC42V5258 MGFC42V525804 MGFC42V52 |
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3436_04 MGFC42V3436 MGFC42V343604 |
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3742A |
3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| DEA202441BT-2106A2 DEA202450BT-1261A2 DEA202450BT- |
Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth
|
TDK Electronics
|
| MGFC44V5964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC41V5964 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz)
|
TOSHIBA
|
| BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
