| PART |
Description |
Maker |
| MGFL48V1920 |
From old datasheet system
1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS52BN2122A |
2.1-2.2 GHz BAND 160W GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5258 |
5.2-5.8 GHz BAND 4W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK38V2732 |
12.7-13.2 GHz BAND 6W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK30V4045 |
14.0-14.5 GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V7785A |
7.7-8.5 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
