PART |
Description |
Maker |
MH16V7245BWJ-5 MH16V7245BWJ-6 |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
MH16V724AWJ-5 MH16V724AWJ-6 |
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
MB814405D |
Hyper Page Mode Dynamic RAM
|
Fujitsu Microelectronics
|
MB8144265 |
Hyper Page Mode Dynamic RAM
|
Fujitsu Microelectronics
|
HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG http:// Siemens Semiconductor Group
|
MB8502E032AA-60 |
2 M×32 BITS Hyper Page Mode DRAM Module(CMOS 2 M×32 位超级页面存取模式动态RAM模块) 2米32位超页模式内存的CMOS米32位超级页面存取模式动态内存模块)
|
Fujitsu, Ltd.
|
M5M44265CJ M5M44265CJ-5 M5M44265CJ-5S M5M44265CJ-6 |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HYB5117805BSJ-70 HYB5117805BSJ-60 HYB5117805BSJ-50 |
From old datasheet system 2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
MB81V16165A-70L |
CMOS 1M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
MH8V7245BWZTJ-6 MH8V7245BWZTJ-5 |
HYPER PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH32V7245BST-6 MH32V7245BST-5 |
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|